In this paper, a novel built-in sensor (BIS) for digital CMOS circuit testing has been proposed. The proposed BIS has no voltage degradation and it is able to detect, identify and localize both open and short circuit faults. Moreover, it has a simple realization with very small area and detection time. A 4×4 multiplier cell is tested by the proposed BIS and all injected faults are detected. © 2009 IEEE.
On the mathematical modeling of Memristors
Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor’s resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time. © 2009 IEEE.
Built-in Current Sensor for testing Current Feedback Operational Amplifier
This paper presents novel Built In Sensor (BIS) to test a well-known analog building block, the Current Feedback Operational Amplifier (CFOA)
HP Memristor mathematical model for periodic signals and DC
Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity
Time domain oscillating poles: Stability redefined in Memristor based Wien-oscillators
State space modeling of Memristor based Wien ‘A’ oscillator has been demonstrated for the first time considering nonlinear ion drift in Memristor