This paper discusses the boundary dynamics of the charge-controlled memcapacitor for Joglekar’s window function that describes the nonlinearities of the memcapacitor’s boundaries. A closed form solution for the memcapacitance is introduced for general doping factor (Formula presented.)p. The derived formulas are used to predict the behavior of the memcapacitor under different voltage excitation sources showing a great matching with the circuit simulations. The effect of the doping factor (Formula presented.) on the time domain response of the memcapacitor has been studied as compared to the linear model using the proposed formulas. Moreover, the generalized fundamentals such as the saturation time of the memcapacitor are introduced, which play an important role in many control applications. Then the boundary dynamics under sinusoidal excitation are used as a basis to analyze any periodic signal by Fourier series, and the results have been verified using PSPICE simulations showing a great matching. As an application, two configuration of resistive-less memcapacitor-based relaxation oscillators are proposed and closed form expressions for oscillation frequency and conditions for oscillation are derived in presence of nonlinear model. The proposed oscillator is verified using PSPICE simulation showing a perfect matching. © 2015, Springer Science+Business Media New York.
Resistive-less memcapacitor-based relaxation oscillator
Recently, the realization of the conventional relaxation oscillators was introduced based on memristors. This paper validates the concept using two series memcapacitors in general which is applicable for a capacitor and memcapacitor as well. Furthermore, the necessary conditions for oscillation are introduced, and a generalized closed-form expression for the oscillation frequency is derived. Two special cases are introduced and verified using PSPICE simulations showing a perfect matching. Copyright © 2014 John Wiley & Sons, Ltd.
Fractional order oscillators based on operational transresistance amplifiers
In this paper, a general analysis of the fractional order operational transresistance amplifiers (OTRA) based oscillator is presented and validated through eight different circuits which represent two classifications according to the number of OTRAs. The general analytical formulas of the oscillation frequency, condition as well as the phase difference are illustrated for each case and summarized in tables. One of the advantages of the fractional-order circuit is the extra degrees of freedom added from the fractional-order parameters. Moreover different special cases {? = ? ? 1, ? ? ? = 1, ? ? ? = 1} are investigated where the conventional case ? = ? = 1 is included in all of them. Also, the effect of the fractional order parameter on the phase difference between the two oscillator outputs is presented which increases the design flexibility and controllability. The effect of the non-ideal characteristics associated with OTRA on the presented oscillator is also studied. A comparison between the fractional order oscillators with their integer order counterpart is also presented to verify the advantages of the added fractional order parameters. Numerical and spice simulations are given to validate the presented analysis. © 2015 Elsevier GmbH.
Memristor based N-bits redundant binary adder
This paper introduces a memristor based N-bits redundant binary adder architecture for canonic signed digit code CSDC as a step towards memristor based multilevel ALU
Neuron model with simplified memristive ionic channels
A simplified neuron model is introduced to mimic the action potential generated by the famous Hodgkin-Huxley equations by using the genetic optimization algorithm
Design of Positive, Negative, and Alternating Sign Generalized Logistic Maps
The discrete logistic map is one of the most famous discrete chaotic maps which has widely spread applications
Encryption applications of a generalized chaotic map
This paper presents the mathematical aspects of a generalized Sine map with arbitrary powers and scaling factor
Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements
Abstract Pinched hysteresis is considered to be a signature of the existence of memristance
Power dissipation of memristor-based relaxation oscillators
Recently, many reactance-less memristive relaxation oscillators were introduced, where the charging and discharging processes depend on memristors

