In this paper, a Static Noise Margin (SNM) analysis for 2T2M RRAM cell is investigated
Fractional order four-phase oscillator based on double integrator topology
This paper presents a generalization of Soliman’s four-phase oscillator into the fractional-order domain
Reactance-less RM relaxation oscillator using exponential memristor model
Recently, the memristor based relaxation oscillators become an important topic in circuit theory where the reactive elements are replaced by memristor which occupies a very small area