On the mathematical modeling of Memristors

Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor’s resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time. © 2009 IEEE.

The effect of numerical techniques on differential equation based chaotic generators

In this paper, we study the effect of the numerical solution accuracy on the digital implementation of differential chaos generators. Four systems are built on a Xilinx Virtex 4 FPGA using Euler, mid-point, and Runge-Kutta fourth order techniques. The twelve implementations are compared based on the FPGA used area, maximum throughput, maximum Lyapunov exponent, and autocorrelation confidence region. Based on circuit performance and the chaotic response of the different implementations, it was found that less complicated numerical solution has better chaotic response and higher throughput. © 2011 IEEE.