Reactance-less RM relaxation oscillator using exponential memristor model


Recently, the memristor based relaxation oscillators become an important topic in circuit theory where the reactive elements are replaced by memristor which occupies a very small area. In this paper, a design of memristor-based relaxation oscillator is introduced based on exponential memristor model. Unlike previously published oscillators which were built based on a simple memristor model, the exponential model is used, as a generalized model, to verify the concept of memristor based RM oscillator using a model that has electrical characteristic very close to the fabricated device. First, the effect of changing parameters of the memristor is illustrated using graphical analysis. Then, a reasonable range of values for the device parameters are selected to be suitable for the operation of the RM oscillator. The mathematical modeling of the memristor in the oscillator is introduced, in addition to the effect of changing the control voltage on the oscillation frequency. The design and simulations were carried out using Cadence Virtuoso. © 2016 IEEE.


El-Naggar A.M., Fouda M.E., Madian A.H., Radwan A.G.


Exponential; Memristor; Relaxation Oscillator

Document Type

Confrence Paper


Proceedings of the International Conference on Microelectronics, ICM, Art. No. 7847890, PP. 361 to 364, Doi: 10.1109/ICM.2016.7847890

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