Simple MOS transistor-based realization of fractional-order capacitors


A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown. © 2019 IEEE


Fouda M.E., AboBakr A., Elwakil A.S., Radwan A.G., Eltawil A.M.


Field effect transistors; 65nm CMOS technology; Center frequency; Circuit blocks; Fractional order; Phase error; Second orders; MOS capacitors

Document Type

Confrence Paper


Proceedings – IEEE International Symposium on Circuits and Systems, Vol. 2019-May, Art. No. 8702341, Doi: 10.1109/ISCAS.2019.8702341

Scopus Link

Comments are closed.