Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements


Abstract Pinched hysteresis is considered to be a signature of the existence of memristance. However, here we report on a model that exhibits pinched hysteresis yet it may represent a nonlinear inductor or a nonlinear capacitor (both with quadratic nonlinearity) or a derivative-controlled nonlinear resistor/transconductor. Further, the lobe area of the pinched hysteresis loop in these devices has inverse-memristor characteristics; i.e. it is observed to widen rather than decline with increased operating frequency. Experimental results are provided to validate the model. © 2015 Elsevier Ltd.


Fouda M.E., Elwakil A.S., Radwan A.G.


Memristors; Nonlinear devices; Pinched hysteresis

Document Type



Microelectronics Journal, Vol. 46, Art. No. 3861, PP. 834 to 838, Doi: 10.1016/j.mejo.2015.06.019

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