HP Memristor mathematical model for periodic signals and DC


Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor’s resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time. © 2009 IEEE.


Radwan A.G., Zidan M.A., Salama K.N.


Bounding conditions; Hp labs; Mathematical modeling; Memristor; Operating currents; Sinusoidal input voltage; SPICE simulations; Computer simulation; Frequency response; Hysteresis; Memristors; Microelectronics; Passive filters; Resistors; Mathematical models

Document Type

Confrence Paper


Proceedings of the International Conference on Microelectronics, ICM, Art. No. 5696139, PP. 284 to 287, Doi: 10.1109/ICM.2010.5696139

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