General fractional order mem-elements mutators


This paper proposes the realization of grounded and floating fractional order mem-elements (FOMEs) based on two- and three-port mutators, respectively. Three different topologies based on two-port mutators are implemented using the four members of the second-generation current conveyor (CCII) family which is useful to achieve several realizations for the same circuit. The Fractional Order Mem-capacitor (FOMC) and Fractional Order Mem-inductor (FOMI) are realized using different combinations of memristor and fractional order capacitor (FOC) plus resistors. In addition, the generalization of the three-port mutator increases the flexibility to design the floating FOMI and FOMC mutators. The order ? of the employed FOC affects the location of the pinched point and the hysteresis loop area. The q ? v of FOMC and ? ? i of FOMI curves are presented showing the movement of the pinched point location and the hysteresis loop area with different ? at different applied frequency. Circuit simulations and experimental results for the mutator circuits are introduced to validate the theoretical findings. © 2019 Elsevier Ltd


Khalil N.A., Said L.A., Radwan A.G., Soliman A.M.


Floating impedance; Fractional-order circuits; Memcapacitor; Meminductor; Mutators

Document Type



Microelectronics Journal, Vol. 90, PP. 211 to 221, Doi: 10.1016/j.mejo.2019.05.018

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