In this paper, an ultra-low-voltage charge pump is presented. Two techniques are used to reduce required number of stages and improve power efficiency, namely clock boosting and Vt cancellation. Clock boosting is employed to increase the output voltage per stage resulting in lower number of stages, and hence smaller output resistance. Vt cancellation is achieved by using an auxiliary circuit that enables the charge pump to operate at input voltages as low as 300mV. Compared to conventional charge pump techniques, the proposed technique is shown to offer higher power efficiency and voltage gain. The charge pump is designed using TSMC 0.25?m CMOS technology. © 2011 IEEE.
Abdelaziz S., Emira A., Radwan A.G., Mohieldin A.N., Soliman A.M.
Auxiliary circuits; Charge pump; Clock boosting; CMOS technology; Input voltages; Output resistance; Output voltages; Power efficiency; Thermoelectric energy; Ultra-low-voltage; Voltage gain; Charge pump circuits; CMOS integrated circuits; Electric resistance; Industrial electronics; Pumps
Proceedings – ISIE 2011: 2011 IEEE International Symposium on Industrial Electronics, Art. No. 5984135, PP. 71 to 75, Doi: 10.1109/ISIE.2011.5984135